I. Product Overview
The ultra-high resolution and ultra-high throughput xenon plasma FIB-SEM is an advanced micro-nano fabrication and characterization platform integrating high-beam-current plasma focused ion beam (Plasma FIB) and high-resolution scanning electron microscope (SEM). Equipped with a xenon plasma ion source, the system delivers outstanding spatial resolution while drastically boosting material removal efficiency, making it ideal for rapid fabrication and precision analysis of large-size, thick-layer and high-hardness materials.
SOLARIS X is a powerful integrated FIB-SEM analysis platform engineered to tackle the most demanding physical failure analysis tasks in semiconductor and material characterization, featuring exceptional precision and throughput for both analysis and micro-machining.
The SOLARIS X incorporates the new-generation "Triglav™" SEM column fitted with a newly developed wide-energy-spectrum system, delivering superior imaging and detection performance. Meanwhile, the innovative iFIB™ gas ion source further expands the scope of FIB applications, enhances cross-section milling of large-volume specimens and 3D crystallite analysis, drastically cuts down processing time and improves overall workflow efficiency.
Compared with gallium (Ga) ions, xenon (Xe) plasma ions feature higher atomic mass and larger atomic radius, with ion velocity over 50 times that of conventional gallium ion sources, making them particularly suitable for long-duration and large-volume milling operations. Xenon plasma avoids surface contamination, prevents the formation of intermetallic compounds, and preserves the original chemical properties of processed regions.
Basic Specifications
SEM Resolution: 0.6 nm @ 15 kV
FIB Resolution: <12 nm @ 30 keV
Patented electron lens and column collimation technology enables superior wide-range imaging performance
Xenon plasma generates ion beam currents up to hundreds of nanoamps for stable, high-throughput operation
Multiple specimen holders support maximum milling depth exceeding 1 mm at 30 kV
Adaptive beam optimization function optimizes EDS, WDS, EBSD and other analytical measurements
II. Functional Features
Xenon Plasma FIB: Microamp-level beam current, high material removal rate and low contamination.
High-Resolution FE-SEM: Nanoscale imaging with multiple imaging modes.
In-situ Machining & Imaging: Integrated FIB-SEM design.
High Throughput & Large Specimen Compatibility: Ideal for industrial and scientific research applications.
Automated Serial Sectioning & 3D Reconstruction.
III. Application Scenarios & Fields
Failure Analysis of Semiconductors and Integrated Circuits
Advanced Packaging and TSV Structure Characterization
Research on New Materials and Nanodevices
Structural Analysis of Energy Materials and Batteries
Inspection of Metallurgical, Geological and Industrial Materials
IV. Technical Advantages
Ultra-high throughput machining capacity
Low ion implantation contamination
Balanced resolution and processing efficiency
Stable long-term continuous operation
Highly expandable analytical platform
V. Typical Models & Application Cases
Type | Positioning | Features | Application Cases |
High-resolution research-grade | Centered on ultra-high spatial resolution and low-damage processing, it targets cutting-edge scientific research and fine structure analysis. |
· Xenon Plasma FIB (Fine Tuning at Low to Medium Beam Current)
· High-resolution Field Emission Scanning Electron Microscope
· High-stability Sample Stage with Precision Positioning Support
· Suitable for Nanoscale Precision Cutting and Cross-section Preparation
|
· Cross-sectional structural analysis of two-dimensional materials (graphene, TMDs)
· Fabrication and morphological observation of nanowires and nanopore arrays
· Research on the fine interface structure of thin films/multilayer films
· High-resolution TEM sample preparation (Lamella preparation)
|
Ultra-high throughput analytical type | Centered on ultra-high spatial resolution and low-damage processing, it targets cutting-edge scientific research and fine structure analysis. |
· Microampere high beam current xenon plasma ion source · Large field-of-view and high depth-of-field SEM imaging capability · Enhanced thermal stability and long-duration continuous operation design · Support for rapid large-area milling and deep cutting
|
· Overall cross-section analysis of advanced packaging (2.5D / 3D IC, TSV)
· Thick-layer structure dissection of power semiconductor devices (IGBT, MOSFET)
· Failure localization of multi-layer metal interconnections and dielectric layers
· Batch failure analysis and quality evaluation of industrial products
|
Specialized for 3D Reconstruction | For quantitative analysis of three-dimensional structures and volumetric structure reconstruction, emphasis is placed on automation and data consistency |
· Continuous automatic slicing via xenon plasma FIB · In-situ layer-by-layer imaging with SEM · High-precision slice thickness control · Support for 3D data reconstruction and volume analysis
|
· Three-dimensional Reconstruction of Pore Structure in Lithium Battery Electrodes
· Analysis of Internal Network of Porous Materials and Metal Foams
· Research on Spatial Distribution of Reinforcement Phases in Composite Materials
· Analysis of Three-dimensional Morphology of Biomaterials or Bionic Structures
|
Industrial stable operation type | Centered on reliability, repeatability and adaptability to industrial environments, it is suitable for production and quality control scenarios |
· Long-life xenon plasma source · Industrial-grade stable power supply and control system · Rapid sample replacement and high-throughput process design · Suitable for long-duration and high-frequency operation
|
· Quality Sampling Inspection in Semiconductor Manufacturing Process · Structural Consistency Evaluation for Advanced Materials Production Process · Analysis of Industrial Coating Thickness and Interfacial Bonding · Long-Term Operation Platform for Failure Analysis Laboratory
|
Working Principle Diagram
Data chart
